NSN Safran Part 147 20001 158

Quote for 147-20001-158 Part with NSN 5961-00-468-8427 by Safran

Part No. : 147-20001-158 Alternate P/N : 14720001158 Manufacturer : Safran Item Name : semiconductor devices unitized CAGE Code : F6151 NSN : 5961-00-468-8427 FSC : 5961 semiconductor devices and associated hardware

Parts we carry include part number 147-20001-158, Semiconductor Devices Unitized with NSN 5961004688427 by Safran. Just fill out the Request for Quote (RFQ) form below to get started on a quote. As you fill out the RFQ, make sure that all fields are properly completed. Your quote will be determined primarily by your response to asterisk-marked (*) fields like Need Parts By and Quantity (ea).

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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number 147-20001-158 with NSN 5961-00-468-8427, 5961004688427

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-00-468-8427

Item Description:

Semiconductor Devices Unitized

59610046884270NB
CIICHCCESDPMICCriticalityENAC
UBS
Part NumberISCRNVCRNCCHCCMSDSSADC
147-20001-158295

Characteristics Data of NSN 5961-00-468-8427, 5961004688427

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALPLASTIC
ABHPOVERALL LENGTH0.340 INCHES NOMINAL
ABKWOVERALL HEIGHT0.120 INCHES NOMINAL
ABMKOVERALL WIDTH0.250 INCHES NOMINAL
ASKACOMPONENT NAME AND QUANTITY1 LIGHT EMITTING DIODE AND 1 TRANSISTOR
AXGYMOUNTING METHODTERMINAL
CTMZSEMICONDUCTOR MATERIALGALLIUM ARSENIDE SINGLE LIGHT EMITTING DIODE
CTMZSEMICONDUCTOR MATERIALSILICON SINGLE TRANSISTOR
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC3.0 MAXIMUM REVERSE VOLTAGE, DC SINGLE LIGHT EMITTING DIODE
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SINGLE TRANSISTOR AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER TO COLLECTOR, BASE OPEN SINGLE TRANSISTOR
CTQXCURRENT RATING PER CHARACTERISTIC60.00 MILLIAMPERES FORWARD CURRENT, AVERAGE MAXIMUM SINGLE LIGHT EMITTING DIODE AND 3.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL SINGLE LIGHT EMITTING DIODE
CTRDPOWER RATING PER CHARACTERISTIC100.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE LIGHT EMITTING DIODE
CTRDPOWER RATING PER CHARACTERISTIC150.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE SINGLE TRANSISTOR
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS AMBIENT AIR
FEATSPECIAL FEATURESPHOTOISOLATOR; SINGLE TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN; SINGLE LIGHT EMITTING DIODE JUNCTION PATTERN ARRANGEMENT: PN
PMLCPRECIOUS MATERIAL AND LOCATIONPLATED LEADS OPTION SILVER
TESTTEST DATA DOCUMENT30003-247AS-C1848 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING
TTQYTERMINAL TYPE AND QUANTITY6 PIN

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