NSN Lattice Semiconductor Corp Part GAL20V8A 10LP

Quote for GAL20V8A-10LP Part with NSN 5962-01-352-1025 by Lattice Semiconductor Corp

Part No. : GAL20V8A-10LP Alternate P/N : GAL20V8A10LP Manufacturer : Lattice Semiconductor Corp Item Name : microcircuit memory CAGE Code : 66675 NSN : 5962-01-352-1025 FSC : 5962 microcircuits electronic

Parts we carry include part number GAL20V8A-10LP, Microcircuit Memory with NSN 5962013521025 by Lattice Semiconductor Corp. Just fill out the Request for Quote (RFQ) form below to get started on a quote. As you fill out the RFQ, make sure that all fields are properly completed. Your quote will be determined primarily by your response to asterisk-marked (*) fields like Need Parts By and Quantity (ea).

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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number GAL20V8A-10LP with NSN 5962-01-352-1025, 5962013521025

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-352-1025

Item Description:

Microcircuit Memory

59620135210250NB
CIICHCCESDPMICCriticalityENAC
UBA0
Part NumberISCRNVCRNCCHCCMSDSSADC
Gal20v8a-10lp215

Characteristics Data of NSN 5962-01-352-1025, 5962013521025

MRCCriteriaCharacteristic
ABKWOVERALL HEIGHT0.320 INCHES NOMINAL
ADATBODY WIDTH0.270 INCHES NOMINAL
ADAUBODY HEIGHT0.185 INCHES NOMINAL
AFGAOPERATING TEMP RANGE+0.0/+75.0 DEG CELSIUS
AGAVEND ITEM IDENTIFICATION4935-01-262-0017 TEST SET,GUIDED
CBBLFEATURES PROVIDEDLOW POWER AND MONOLITHIC AND HIGH PERFORMANCE AND HIGH SPEED AND 3-STATE OUTPUT AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL
CQSJINCLOSURE MATERIALPLASTIC
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC-0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
CZEPCAPITANCE RATING PER CHARACTERISTIC10.00 INPUT PICOFARADS MAXIMUM AND 10.00 OUTPUT PICOFARADS MAXIMUM
CZEQTIME RATING PER CHACTERISTIC10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY
CZERMEMORY DEVICE TYPEPAL
AFJQSTORAGE TEMP RANGE-65.0/+125.0 DEG CELSIUS
ADAQBODY LENGTH1.270 INCHES NOMINAL
CQZPINPUT CIRCUIT PATTERN14 INPUT
TTQYTERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT
ABHPOVERALL LENGTH1.270 INCHES NOMINAL

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