Quote for 27S33 Part with NSN 5962-01-123-4335 by Advanced Micro Devices Inc

Part No. : 27S33 Manufacturer : Advanced Micro Devices Inc Item Name : microcircuit memory CAGE Code : 34335 NSN : 5962-01-123-4335 FSC : 5962 microcircuits electronic

Parts we carry include part number 27S33, Microcircuit Memory with NSN 5962011234335 by Advanced Micro Devices Inc. Just fill out the Request for Quote (RFQ) form below to get started on a quote. As you fill out the RFQ, make sure that all fields are properly completed. Your quote will be determined primarily by your response to asterisk-marked (*) fields like Need Parts By and Quantity (ea).

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This is a quotation for the goods listed above. This quotation is meant as an estimate and does not reflect a final bill or invoice. All quotations are subject to change until acceptance by ASAP Semiconductor of a binding Purchase Order, and quotations may be withdrawn or revised at the sole discretion of ASAP Semiconductor. This quotation is subject to the ASAP Semiconductor Terms & Conditions available at https://www.asapsemi.com/terms-conditions.aspx. All United States Government and Department of Defense bids are quoted as CAGE code 6RE77 from ASAP Semiconductor’s Anaheim, California facility. Any quotation from ASAP Semiconductor without CAGE code 6RE77 is void.

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NSN Information for Part Number 27S33 with NSN 5962-01-123-4335, 5962011234335

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5962-01-123-4335

Item Description:

Microcircuit Memory

59620112343350NB
CIICHCCESDPMICCriticalityENAC
7BA0
Part NumberISCRNVCRNCCHCCMSDSSADC
27s33295

Characteristics Data of NSN 5962-01-123-4335, 5962011234335

MRCCriteriaCharacteristic
ADAQBODY LENGTH0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
ADATBODY WIDTH0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
ADAUBODY HEIGHT0.090 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING175.0 MILLIWATTS
AFGAOPERATING TEMP RANGE-55.0 TO 125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0 TO 150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
CQSJINCLOSURE MATERIALGLASS AND METAL
CQSZINCLOSURE CONFIGURATIONFLAT PACK
CQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
CQZPINPUT CIRCUIT PATTERN12 INPUT
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.5 VOLTS MAXIMUM POWER SOURCE
CZEQTIME RATING PER CHACTERISTIC75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
CZERMEMORY DEVICE TYPEROM
TESTTEST DATA DOCUMENT82577-932883 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI
TTQYTERMINAL TYPE AND QUANTITY18 FLAT LEADS

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