NSN 5962-01-231-8330, 5962012318330 Microcircuit Memory Parts Sourcing
If you have been looking for Texas Instruments Incorporated, Integrated Device Technology Inc parts listed alongside the NSN 5962012318330, ASAP Distribution has you covered with our unmatched inventory of items Microcircuit Memory. With over 2 billion parts readily available for purchase on our website, customers can get competitive pricing offers and rapid lead-times on top NSN part numbers such as SMJ5517-20JDM, SA120DB. Explore our NSN parts catalog at your leisure, or you may take advantage of our provided search engine to find specific parts in a matter of moments. If you are interested in this particular component or others listed across our website, you may begin the procurement process at any time through the submission of an Instant RFQ form. Using the information that you submit to us, our team of industry experts will quickly craft you a quote that accommodates your individual needs and requirements for NSN 5962012318330.
| Alternative NSN: 5962-01-231-8330 | Item Name : Microcircuit Memory | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5962 Microcircuits Electronic | NIIN: 012318330 | NCB Code: USA (01) |
Part Number's List for NSN 5962-01-231-8330, 5962012318330
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| SMJ5517-20JDM | Texas Instruments Incorporated | microcircuit memory | Avl | RFQ |
| SA120DB | Integrated Device Technology Inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012318330
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 310 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 550 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 180 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-55 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDSTATIC OPERATION AND 3-STATE OUTPUT AND WENABLE |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN15 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY2048 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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