NSN 5962-01-159-4945, 5962011594945 Microcircuit Memory Parts Sourcing
If you have been looking for Bae Systems Information And Electronic Systems Integration Inc, Federal Specifications parts listed alongside the NSN 5962011594945, ASAP Distribution has you covered with our unmatched inventory of items Microcircuit Memory. With over 2 billion parts readily available for purchase on our website, customers can get competitive pricing offers and rapid lead-times on top NSN part numbers such as 150752-0001, M38510-20904BJA. Explore our NSN parts catalog at your leisure, or you may take advantage of our provided search engine to find specific parts in a matter of moments. If you are interested in this particular component or others listed across our website, you may begin the procurement process at any time through the submission of an Instant RFQ form. Using the information that you submit to us, our team of industry experts will quickly craft you a quote that accommodates your individual needs and requirements for NSN 5962011594945.
| Alternative NSN: 5962-01-159-4945 | Item Name : Microcircuit Memory | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5962 Microcircuits Electronic | NIIN: 011594945 | NCB Code: USA (01) |
Part Number's List for NSN 5962-01-159-4945, 5962011594945
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 150752-0001 | Bae Systems Information And Electronic Systems Integration Inc | microcircuit memory | Avl | RFQ |
| M38510-20904BJA | Federal Specifications | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011594945
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM AND 0 210 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 4 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND WACTIVE PULL-UP |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC90 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 90 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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