NSN 5961-01-333-4343, 5961013334343 Semiconductor Device Diode Parts Sourcing
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| Alternative NSN: 5961-01-333-4343 | Item Name : Semiconductor Device Diode | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5961 Semiconductor Devices and Associated Hardware | NIIN: 013334343 | NCB Code: USA (01) |
Part Number's List for NSN 5961-01-333-4343, 5961013334343
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| JAN1N6121A | Microsemi Corp | semiconductor device diode | Avl | RFQ |
Characteristics Data of NSN 5961013334343
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| AXGY | MOUNTING METHOD | TERMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES FORWARD CURRENT, AVERAGE HORSEPOWER METRIC |
| CTRD | POWER RATING PER CHARACTERISTIC | 3.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MAJOR |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/516 GOVERNMENT SPECIFICATION |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.9 MINIMUM BREAKDOWN VOLTAGE, DC AND 32.7 MAXIMUM WORKING PEAK REVERSE VOLTAGE |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
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