NSN 5961-01-331-9838, 5961013319838 Semiconductor Device Diode Parts Sourcing
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| Alternative NSN: 5961-01-331-9838 | Item Name : Semiconductor Device Diode | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5961 Semiconductor Devices and Associated Hardware | NIIN: 013319838 | NCB Code: USA (01) |
Part Number's List for NSN 5961-01-331-9838, 5961013319838
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| BP14515 | Burke Products Inc | semiconductor device diode | Avl | RFQ |
Characteristics Data of NSN 5961013319838
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM AND 1.625 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
| AFZC | FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| AGAV | END ITEM IDENTIFICATION | INERTIAL NAVIGATION SYSTEM AN/WSN-1(V)2 |
| ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-13 |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 210.0 MAXIMUM BREAKDOWN VOLTAGE, DC |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MICROAMPERES FORWARD CURRENT, AVERAGE PEAK |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.0 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MAJOR |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| FEAT | SPECIAL FEATURES | TERMINAL LUG SLEEVING INSULATION; JUNCTION PATTERN ARRANGEMENT: PN |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
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