NSN 5961-01-104-8309, 5961011048309 Transistor Parts Sourcing
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Alternative NSN: 5961-01-104-8309 | Item Name : Transistor | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5961 Semiconductor Devices and Associated Hardware | NIIN: 011048309 | NCB Code: USA (01) |
Part Number's List for NSN 5961-01-104-8309, 5961011048309
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
200003 | Arnoux Corp | transistor | Avl | RFQ |
200037 | Arnoux Corp | transistor | Avl | RFQ |
Characteristics Data of NSN 5961011048309
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | PLASTIC |
ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.175 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-92 |
AXGY | MOUNTING METHOD | TERMINAL |
AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 6.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CTQX | CURRENT RATING PER CHARACTERISTIC | 200.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
CTRD | POWER RATING PER CHARACTERISTIC | 350.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
FEAT | SPECIAL FEATURES | SLECTED 2N3904 JEDEC DWG TYPE TRANSISTOR; LOW LEAKAGE 0.5 NANO AMP; JUNCTION PATTERN ARRANGEMENT: NPN |
TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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