NSN 5961-00-846-9125, 5961008469125 Semiconductor Device Diode Parts Sourcing
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Alternative NSN: 5961-00-846-9125 | Item Name : Semiconductor Device Diode | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5961 Semiconductor Devices and Associated Hardware | NIIN: 008469125 | NCB Code: USA (00) |
Part Number's List for NSN 5961-00-846-9125, 5961008469125
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
S57-7866 | Miltope Corp | semiconductor device diode | Avl | RFQ |
1N702A | Electronic Transistors Corp | semiconductor device diode | Avl | RFQ |
1N702A | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
1N702A | N A P Smd Technology Inc | semiconductor device diode | Avl | RFQ |
353-3044-00 | Alcatel Usa Inc | semiconductor device diode | Avl | RFQ |
1N702A | On Semiconductor Corporation | semiconductor device diode | Avl | RFQ |
2064217 | Itt Federal Laboratories Div Of | semiconductor device diode | Avl | RFQ |
1299116-58 | Honeywell International Inc | semiconductor device diode | Avl | RFQ |
1N702A | Gilbert Engineering Company | semiconductor device diode | Avl | RFQ |
1N702A | Raytheon Company | semiconductor device diode | Avl | RFQ |
95104 | C O D I Corp | semiconductor device diode | Avl | RFQ |
1N702A | C O D I Corp | semiconductor device diode | Avl | RFQ |
1N702A | Semiconductor Devices Inc | semiconductor device diode | Avl | RFQ |
353-3044-00 | Rockwell Collins Inc | semiconductor device diode | Avl | RFQ |
1N702A | General Semiconductor Inc | semiconductor device diode | Avl | RFQ |
1N702A | Burns And Towne Inc | semiconductor device diode | Avl | RFQ |
353-3044-000 | Alcatel Usa Inc | semiconductor device diode | Avl | RFQ |
720670-035REVB | Raytheon Company | semiconductor device diode | Avl | RFQ |
1N4371 | Texas Instruments Incorporated | semiconductor device diode | Avl | RFQ |
95104 | International Rectifier Corporation | semiconductor device diode | Avl | RFQ |
RELEASE 4030 | Electronic Industries Inc | semiconductor device diode | Avl | RFQ |
353-3044-000 | Rockwell Collins Inc | semiconductor device diode | Avl | RFQ |
1N702A | Texas Instruments Incorporated | semiconductor device diode | Avl | RFQ |
C1421 | Howell Instruments Inc | semiconductor device diode | Avl | RFQ |
961-070-20 | Emerson Electric Co | semiconductor device diode | Avl | RFQ |
1N702 | N A P Smd Technology Inc | semiconductor device diode | Avl | RFQ |
1N702A | Telcom Semiconductor Inc | semiconductor device diode | Avl | RFQ |
95104 | Gilbert Engineering Company | semiconductor device diode | Avl | RFQ |
1N702A | Semitronics Corp | semiconductor device diode | Avl | RFQ |
W5046545CS | Oerlikon Buhrle Ag | semiconductor device diode | Avl | RFQ |
353-2862-000 | Rockwell Collins Inc | semiconductor device diode | Avl | RFQ |
95104 | Freescale Semiconductor Inc | semiconductor device diode | Avl | RFQ |
1N702A | International Diode Corp | semiconductor device diode | Avl | RFQ |
1781379-1 | Honeywell Intl Inc | semiconductor device diode | Avl | RFQ |
1781379-1 | Honeywell International Inc | semiconductor device diode | Avl | RFQ |
1N702A | Freescale Semiconductor Inc | semiconductor device diode | Avl | RFQ |
1N702A | Microsemi Corp | semiconductor device diode | Avl | RFQ |
1N702A | International Rectifier Corporation | semiconductor device diode | Avl | RFQ |
1N702 | L 3 Communications Electron | semiconductor device diode | Avl | RFQ |
1N702A | Solitron Devices Inc | semiconductor device diode | Avl | RFQ |
95104 | Telcom Semiconductor Inc | semiconductor device diode | Avl | RFQ |
013-461 | Ampex Great Britain Ltd | semiconductor device diode | Avl | RFQ |
Characteristics Data of NSN 5961008469125
MRC | Criteria | Characteristic |
---|---|---|
ABBH | INCLOSURE MATERIAL | GLASS |
ABHP | OVERALL LENGTH | 0.265 INCHES NOMINAL |
ABJT | TERMINAL LENGTH | 1.000 INCHES MINIMUM |
ADAV | OVERALL DIAMETER | 0.096 INCHES NOMINAL |
AFZC | FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
AXGY | MOUNTING METHOD | TERMINAL |
CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.6 NOMINAL NOMINAL REGULATOR VOLTAGE |
CTQS | VOLTAGE TOLERANCE IN PERCENT | -11.0/+11.0 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 5.00 MILLIAMPERES ALL PRIMARIES HORSEPOWER METRIC |
CTRD | POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR ABSOLUTE |
CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS AMBIENT AIR |
TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE 4030 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
ALAZ | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-7 |
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