NSN 5962-01-221-2755, 5962012212755 Microcircuit Memory Parts Sourcing
If you have been looking for Hamilton Sundstrand Corporation, Intersil Corporation parts listed alongside the NSN 5962012212755, ASAP Distribution has you covered with our unmatched inventory of items Microcircuit Memory. With over 2 billion parts readily available for purchase on our website, customers can get competitive pricing offers and rapid lead-times on top NSN part numbers such as E8071-149-APP-0014, 5E8071 149A0014, HM1-7611-8. Explore our NSN parts catalog at your leisure, or you may take advantage of our provided search engine to find specific parts in a matter of moments. If you are interested in this particular component or others listed across our website, you may begin the procurement process at any time through the submission of an Instant RFQ form. Using the information that you submit to us, our team of industry experts will quickly craft you a quote that accommodates your individual needs and requirements for NSN 5962012212755.
| Alternative NSN: 5962-01-221-2755 | Item Name : Microcircuit Memory | FSG : 59 Electrical and Electronic Equipment Components | Federal Supply Class (FSC) : 5962 Microcircuits Electronic | NIIN: 012212755 | NCB Code: USA (01) |
Part Number's List for NSN 5962-01-221-2755, 5962012212755
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| E8071-149-APP-0014 | Hamilton Sundstrand Corporation | microcircuit memory | Avl | RFQ |
| 5E8071 149A0014 | Hamilton Sundstrand Corporation | microcircuit memory | Avl | RFQ |
| HM1-7611-8 | Intersil Corporation | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012212755
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 760 INCHES NOMINAL |
| MEMORY | ADAT | BODY WIDTH0 270 INCHES NOMINAL |
| MEMORY | ADAU | BODY HEIGHT0 150 INCHES NOMINAL |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDBIPOLAR AND 3-STATE OUTPUT AND HIGH SPEED AND PROGRAMMABLE AND SCHOTTKY |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
| MEMORY | CRHL | BIT QUANTITY1024 |
| MEMORY | CSWJ | WORD QUANTITY256 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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